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Manufacturer Part #

NDS9948

Dual P-Channel 60 V 250 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2431
Product Specification Section
onsemi NDS9948 - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 250mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 9nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The NDS9948 Part Number is a Dual P-Channel MOSFET is a rugged gate version of Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V - 20 V).

Features:

  • -2.3 A, -60 V
  • RDS(ON) = 250 mO @ VGS = -10 V
  • RDS(ON) = 500 mO @ VGS = -4.5 V
  • Low gate charge (9 nC typical)
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
5000
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,050.00
USD
Quantity
Unit Price
2,500
$0.215
5,000
$0.21
37,500+
$0.205
Product Variant Information section