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onsemi | NVB190N65S3F

Manufacturer Part #

NVB190N65S3F

650 V , 20 A, 190 mΩ, N-ch D2PAK

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2531
Product Specification Section
onsemi NVB190N65S3F - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 162W
Qg Gate Charge: 34nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 20A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 43ns
Rise Time: 13ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 1605pF
Series: SUPERFET III
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,600
USA:
1,600
On Order:
0
Factory Stock:Factory Stock:
57,600
Factory Lead Time:
10 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$1,760.00
USD
Quantity
Unit Price
800
$2.20
1,600
$2.19
2,400
$2.18
3,200
$2.17
4,000+
$2.15
Product Variant Information section