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Manufacturer Part #

PMCXB900UEZ

PMCX900UEZ Series 20 V 620 mOhm 265 mW N/P Channel TrenchMOS FET - DFN1010B-6

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia PMCXB900UEZ - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.62Ω/1.4Ω
Rated Power Dissipation: 265mW
Qg Gate Charge: 0.4nC/1.19nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 0.6A/0.5A
Turn-on Delay Time: 5.6ns/2.3ns
Turn-off Delay Time: 19ns/13.5ns
Rise Time: 9.2ns/5ns
Fall Time: 51ns/6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.7V
Input Capacitance: 21.3pF/43pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
10000
Multiple Of:
5000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,820.00
USD
Quantity
Unit Price
5,000
$0.184
10,000
$0.182
15,000
$0.181
20,000
$0.18
25,000+
$0.177
Product Variant Information section