text.skipToContent text.skipToNavigation

Manufacturer Part #

SI4204DY-T1-GE3

DUAL N-CH MOSFET SO-8 BWL 20V 4.6MOHM @ 10V

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2522
Product Specification Section
Vishay SI4204DY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.006Ω
Rated Power Dissipation: 2W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 15.5A
Turn-on Delay Time: 35ns
Turn-off Delay Time: 50ns
Rise Time: 45ns
Fall Time: 26ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.4V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 2110pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
51 Weeks
Minimum Order:
2500
Multiple Of:
2500
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,300.00
USD
Quantity
Unit Price
2,500
$1.32
5,000+
$1.30
Product Variant Information section