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Manufacturer Part #

SI5515CDC-T1-E3

Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI5515CDC-T1-E3 - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.05Ω/0.156Ω
Rated Power Dissipation: 2.1W/1.3W
Qg Gate Charge: 11.3nC/11nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 3.1A/4A
Turn-on Delay Time: 7ns/10ns
Turn-off Delay Time: 30ns/25ns
Rise Time: 18ns/48ns
Fall Time: 20ns/12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.8V
Technology: Si
Height - Max: 1.1mm
Length: 3.1mm
Input Capacitance: 632pF/455pF
Pricing Section
Global Stock:
0
USA:
0
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Total
$3,930.00
USD
Quantity
Unit Price
3,000+
$1.31
Product Variant Information section