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Manufacturer Part #

SI7868ADP-T1-E3

Single N-Channel 20 V 0.00225 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI7868ADP-T1-E3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.00225Ω
Rated Power Dissipation: 83|W
Qg Gate Charge: 150nC
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Features & Applications
Vishay was founded in 1962 and is now one of the world’s largest manufacturers of discrete semiconductors.  The PowerPAK’s innovative leadless packaging provides a direct thermal path between the power MOSFET die and the natural heat sink supplied by the printed circuit board. The thermal path is established by soldering the die-attach copper pad directly to the PCB. This leadless technology also provides for ultra-thin package profiles.The Si7868ADP features TrenchFET® Power MOSFET Technology, is halogen-free and 100 % Rg tested.  This 20V N-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 2.25 milliohms at a 20-V gate drive voltage. Specifically designed for low output voltage synchronous rectifiers.
Pricing Section
Global Stock:
0
USA:
0
12,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,595.00
USD
Quantity
Unit Price
3,000
$0.865
6,000+
$0.845
Product Variant Information section