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Vishay | SIHD180N60E-GE3

Manufacturer Part #

SIHD180N60E-GE3

MOSFET N-CH 600V 19A TO252AA

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2351
Product Specification Section
Vishay SIHD180N60E-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 195mΩ
Rated Power Dissipation: 156W
Qg Gate Charge: 21nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 19A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 23ns
Rise Time: 22ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 1080pF
Series: E
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
28 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$11,190.00
USD
Quantity
Unit Price
3,000+
$3.73
Product Variant Information section