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Manufacturer Part #

SIR626ADP-T1-RE3

N-Channel 60-V (D-S) MOSFET PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIR626ADP-T1-RE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 1.75mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 55nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 40.4A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 30ns
Rise Time: 10ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Input Capacitance: 3770pF
Series: TrenchFET
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
31 Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$4,980.00
USD
Quantity
Unit Price
3,000+
$0.83
Product Variant Information section