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Manufacturer Part #

SIR872ADP-T1-GE3

N-Channel 150 V 18 mOhm 104 W TrenchFET Power MosFet - PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIR872ADP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 31.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12.8A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 15ns
Rise Time: 12ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Input Capacitance: 1286pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
29 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$4,950.00
USD
Quantity
Unit Price
3,000+
$1.65
Product Variant Information section