text.skipToContent text.skipToNavigation

Manufacturer Part #

SIRA18ADP-T1-GE3

Single N-Channel 30 V 0.0135 Ohm 10.5 nC 3.3 W Silicon SMT Mosfet POWERPAK-SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIRA18ADP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.0135Ω
Rated Power Dissipation: 3.3W
Qg Gate Charge: 10.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 14.5A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 30ns
Rise Time: 20ns
Fall Time: 14ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.4V
Technology: Si
Height - Max: 1.12mm
Length: 6.25mm
Input Capacitance: 1000pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
27,000
Factory Lead Time:
48 Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$1,410.00
USD
Quantity
Unit Price
3,000
$0.24
6,000
$0.235
15,000+
$0.23
Product Variant Information section