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Infineon | SPP20N65C3XKSA1

Manufacturer Part #

SPP20N65C3XKSA1

SPP20N65C3 Series 650 V 20.7 A 190 mOhm 208 W 87 nC N-Channel MOSFET - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon SPP20N65C3XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.19Ω
Rated Power Dissipation: 208W
Qg Gate Charge: 87nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 20.7A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 67ns
Rise Time: 5ns
Fall Time: 4.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 2400pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$1,055.00
USD
Quantity
Unit Price
50
$2.11
1,000
$2.09
1,500
$2.08
2,000
$2.07
2,500+
$2.05
Product Variant Information section