Manufacturer Part #
SPP80P06PHXKSA1
Single P-Channel 60 V 23 mOhm 115 nC SIPMOS® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
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Infineon SPP80P06PHXKSA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change informationSubject Transfer of wafer production, wafer test and pre-assembly location to IFX Kulim, and change of wafer diameter from 150 mm to 200 mm, and implementation of new mould compound for PG-TO252 package, for P-Channel Small Signal and Power MOSFETsReason Wafer production, wafer test and pre-assembly location will be transferred according to the global Infineon production strategyDescription Wafer production and wafer test locationWafer diameterPre-assembly location Wafer LotnumberMould compound(PG-TO252)Halogen Free Flag (PG-TO252)OPN incl. SP#(PG-TO252)Production Lot code Marking on device (PG-TO252) Note: See SPCN document for detailed description of changesIntended start of delivery 2026-03-31 or earlier based on customer approval
Part Status:
Infineon SPP80P06PHXKSA1 - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 23mΩ |
| Rated Power Dissipation: | 340|W |
| Qg Gate Charge: | 115nC |
| Drain Current: | 80A |
| Turn-on Delay Time: | 24ns |
| Turn-off Delay Time: | 56ns |
| Rise Time: | 18ns |
| Fall Time: | 30ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Height - Max: | 15.65mm |
| Length: | 10mm |
| Input Capacitance: | 4026pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount