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Manufacturer Part #

SPP80P06PHXKSA1

Single P-Channel 60 V 23 mOhm 115 nC SIPMOS® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon SPP80P06PHXKSA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 23mΩ
Rated Power Dissipation: 340|W
Qg Gate Charge: 115nC
Drain Current: 80A
Turn-on Delay Time: 24ns
Turn-off Delay Time: 56ns
Rise Time: 18ns
Fall Time: 30ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Height - Max: 15.65mm
Length: 10mm
Input Capacitance: 4026pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
0
USA:
0
550
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$690.00
USD
Quantity
Unit Price
50
$1.40
200
$1.38
750
$1.36
1,500
$1.35
3,750+
$1.33
Product Variant Information section