text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. SQD25N06-22L_GE3

Vishay | SQD25N06-22L_GE3

Manufacturer Part #

SQD25N06-22L_GE3

Single N-Channel 60 V 0.022 Ohms Surface Mount Power Mosfet - TO-252

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SQD25N06-22L_GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.022Ω
Rated Power Dissipation: 62|W
Qg Gate Charge: 52nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The SQD25N06-22L-GE3 is a Part of the SQ Automotive Series N-Channel 60 V (D-S) 175 °C MOSFETs.

The Vishay Siliconix SQ series of AEC Q101 qualified power MOSFETs are produced using a special process design that is optimized for automotive excellence. Featuring low on-resistance n- and p-channel TrenchFET® technologies, these automotive power MOSFETs are rated for a maximum junction temperature of 175 °C. 

Features:

  • Superior performance based on leading TrenchFET® Power MOSFET technology
  • AEC Q101 Qualified
  • Rated at 175°C
  • Best in class RDS(on) performance
  • Rugged  transistor technology, 100 % Rg Tested
  • Halogen-free per IEC 61249-2-21 Definition
  • Typical ESD Protection: 800 V
  • Compliant to RoHS Directive 2002/95/EC
  • Available in TO-252 package
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$4,920.00
USD
Quantity
Unit Price
2,000+
$2.46
Product Variant Information section