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Vishay | SQJB80EP-T1_GE3

Manufacturer Part #

SQJB80EP-T1_GE3

Dual N-Channel 80 V 19 mOhm 48 W SMT Automotive Power Mosfet - PowerPAK SO-8L-Dual

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2428
Product Specification Section
Vishay SQJB80EP-T1_GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 19mΩ
Rated Power Dissipation: 48W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 30A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 23ns
Rise Time: 3ns
Fall Time: 24ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Input Capacitance: 1015pF
Package Style:  POWERPAK-SO-8L
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:Order inventroy details
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,530.00
USD
Quantity
Unit Price
3,000
$0.51
6,000
$0.505
9,000
$0.50
15,000+
$0.49
Product Variant Information section