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Manufacturer Part #

STB80N20M5

STB80 Series 200 V 65 A 20 mOhm 190 W 108 nC N-Channel MOSFET - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB80N20M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 23mΩ
Rated Power Dissipation: 190|W
Qg Gate Charge: 104nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
15 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,800.00
USD
Quantity
Unit Price
1,000
$2.80
2,000+
$2.76
Product Variant Information section