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STMicroelectronics | STB8N65M5

Manufacturer Part #

STB8N65M5

N-Channel 650 V 0.6 Ω 70 W Surface Mount Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STB8N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.6Ω
Rated Power Dissipation: 70|W
Qg Gate Charge: 15nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB8N65M5 is a N-channel 650 V, 0.56 Ohm, 7 Amp MDmesh™ V Power MOSFET.

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Features:

  • 100% avalanche tested
  • Worldwide best RDS(on) * area
  • Higher VDSS rating
  • High dv/dt capability
  • Excellent switching performance
  • Easy to drive

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
36 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,020.00
USD
Quantity
Unit Price
1,000
$3.02
2,000+
$2.98
Product Variant Information section