text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. STD10NM60N

STMicroelectronics | STD10NM60N

Manufacturer Part #

STD10NM60N

Single N-Channel 650 V 70 W 19 nC Silicon Surface Mount Mosfet - TO-252-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD10NM60N - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.55Ω
Rated Power Dissipation: 70W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 10A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 32ns
Rise Time: 12ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 2.4mm
Length: 6.6mm
Input Capacitance: 540pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$8,325.00
USD
Quantity
Unit Price
2,500+
$3.33
Product Variant Information section