text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. STD18N65M5

STMicroelectronics | STD18N65M5

Manufacturer Part #

STD18N65M5

N-channel 650 V 0.22 Ohm 110 W Surface Mount MDmesh™ V Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD18N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 220mΩ
Rated Power Dissipation: 110W
Qg Gate Charge: 31nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 15A
Rise Time: 7ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 1240pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$5,000.00
USD
Quantity
Unit Price
2,500+
$2.00
Product Variant Information section