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STMicroelectronics | STD26NF10

Manufacturer Part #

STD26NF10

TO 252 DPAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD26NF10 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.038Ω
Rated Power Dissipation: 100W
Qg Gate Charge: 55nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 25A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 60ns
Rise Time: 60ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 2.17mm
Length: 6.6mm
Input Capacitance: 1550pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications
The STD26NF10 is a N-channel Low gate charge STripFET™ II Power MOSFET. 

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is intended for any application with low gate charge drive requirements. It has an Operating temperature ranges b/w -55 °C to 175 °C and available in a DPAK Package.

Features:

  • Exceptional dv/dt capability
  • Application oriented characterization
  • 100% avalanche tested

Applications:

  • Switching application
    • Automotive
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
15 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,750.00
USD
Quantity
Unit Price
2,500
$0.70
5,000
$0.69
7,500
$0.685
10,000+
$0.68
Product Variant Information section