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STMicroelectronics | STD6N52K3

Manufacturer Part #

STD6N52K3

N-Channel 525 V 1.2 Ohm Surface Mount SuperMesh III Power MosFet - TO-252-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STD6N52K3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 525V
Drain-Source On Resistance-Max: 1.2Ω
Rated Power Dissipation: 25|W
Qg Gate Charge: 26nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The STD6N52K3 is a N-channel SuperMESH3™ Power MOSFET. These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure.

The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.

Features:

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,287.50
USD
Quantity
Unit Price
2,500
$0.515
5,000
$0.51
7,500
$0.505
10,000
$0.50
12,500+
$0.495
Product Variant Information section