text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. STD80N10F7

STMicroelectronics | STD80N10F7

Manufacturer Part #

STD80N10F7

N-Channel 100 V 10 mOhm STripFET™ VII DeepGATE™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STD80N10F7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 10mΩ
Rated Power Dissipation: 85W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 70A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 36ns
Rise Time: 32ns
Fall Time: 13ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.5V
Input Capacitance: 3100pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,937.50
USD
Quantity
Unit Price
2,500
$0.775
5,000
$0.765
7,500
$0.755
10,000+
$0.75
Product Variant Information section