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STMicroelectronics | STL8N6F7

Manufacturer Part #

STL8N6F7

STL8N6F7 Series 60V 8 A N-Channel STripFET™ F7 Power Mosfet-PowerFlat™ (3.3x3.3)

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STL8N6F7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 23mΩ
Rated Power Dissipation: 60W
Qg Gate Charge: 8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 36A
Turn-on Delay Time: 7.85ns
Turn-off Delay Time: 12.1ns
Rise Time: 3.25ns
Fall Time: 3.95ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 420pF
Package Style:  POWER FLAT
Mounting Method: Surface Mount
Features & Applications
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,155.00
USD
Quantity
Unit Price
3,000
$0.385
6,000
$0.38
12,000
$0.375
15,000+
$0.37
Product Variant Information section