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Manufacturer Part #
STP2NK90Z
N-Channel 900 V 5 Ohm 2.1 A Power Mosfet - TO-220
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
STMicroelectronics STP2NK90Z - Product Specification
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STMicroelectronics STP2NK90Z - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 900V |
| Drain-Source On Resistance-Max: | 6.5Ω |
| Rated Power Dissipation: | 70W |
| Qg Gate Charge: | 19.5nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 2.1A |
| Turn-on Delay Time: | 21ns |
| Turn-off Delay Time: | 43ns |
| Rise Time: | 11ns |
| Fall Time: | 40ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.75V |
| Input Capacitance: | 485pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Features & Applications
The STP2NK90Z is a N-Channel Zener-Protected SuperMESH™ MOSFET. It has an Operating temperature ranges b/w -55 °C to 150 °C and available in TO-220 package.
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Features:
- Extremely high dv/dt capability
- Improved esd capability
- 100% avalanche rated
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatibility
Applications:
- Switching applications
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole