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Référence fabricant

STP60NF06

N-Channel 60 V 16 mΩ STripFET II Power MosFet - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP60NF06 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 16mΩ
Rated Power Dissipation: 110|W
Qg Gate Charge: 54nC
Style d'emballage :  TO-220-3 (TO-220AB)
Fonctionnalités et applications

The STP60NF06 is a Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

Features:

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Application oriented characterization

Applications:

  • Switching application

View the Complete family of STP6 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
13 Semaines
Commande minimale :
2000
Multiples de :
50
Total 
860,00 $
USD
Quantité
Prix unitaire
1
$0.465
100
$0.455
300
$0.445
1 500
$0.43
5 000+
$0.41
Product Variant Information section