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Manufacturer Part #
STW18N60M2
N-Channel 600 V 0.28 Ω 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics STW18N60M2 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=STW18N60M2&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/stw18n60m2-stmicroelectronics-8055462
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=STW18N60M2&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/stw18n60m2-stmicroelectronics-8055462
STMicroelectronics STW18N60M2 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 280mΩ |
| Rated Power Dissipation: | 110|W |
| Qg Gate Charge: | 21.5nC |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
20 Weeks
Quantity
Unit Price
30
$1.50
120
$1.48
600
$1.45
1,200
$1.44
3,750+
$1.41
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole