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STMicroelectronics | STW19NM50N

Manufacturer Part #

STW19NM50N

N-Channel 550 V 0.25 Ohm Flange Mount MDmesh II Power MosFet - TO-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STW19NM50N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 550V
Drain-Source On Resistance-Max: 0.25Ω
Rated Power Dissipation: 110|W
Qg Gate Charge: 34nC
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The STW19NM50N is a second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.

Features:

  • 100% avalanche tested
  • Low input capacitances and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
600
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,196.00
USD
Quantity
Unit Price
30
$3.76
120
$3.70
300
$3.66
750
$3.62
1,200+
$3.56
Product Variant Information section