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STMicroelectronics | STW4N150

Manufacturer Part #

STW4N150

STW4N150 Series 1500 V 5 Ohm 4 A N-Channel PowerMESH™ Power Mosfet - TO-247-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
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Product Specification Section
STMicroelectronics STW4N150 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1500V
Drain-Source On Resistance-Max: 7Ω
Rated Power Dissipation: 160|W
Qg Gate Charge: 30nC
Package Style:  TO-247-3
Features & Applications

The STW4N150 is Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

Features:

  • 100% avalanche tested
  • Intrinsic capacitances and Qg minimized
  • High speed switching
  • Fully isolated TO-3PF plastic packages
  • Creepage distance path is 5.4 mm (typ.) for TO-3PF

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
600
Multiple Of:
600
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Total
$4,500.00
USD
Quantity
Unit Price
600+
$7.50
Product Variant Information section