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Manufacturer Part #

STW56N60DM2

N-Channel 600 V 60 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STW56N60DM2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 360W
Qg Gate Charge: 90nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 50A
Turn-on Delay Time: 24ns
Turn-off Delay Time: 130ns
Rise Time: 60ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 4100pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
26 Weeks
Minimum Order:
600
Multiple Of:
600
Total
$6,258.00
USD
Quantity
Unit Price
600+
$10.43
Product Variant Information section