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Manufacturer Part #
SUP70030E-GE3
Single N-Channel 100 V 3.18 mOhm Through Hole TrenchFET® Power Mosfet - TO-220
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay SUP70030E-GE3 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Process Change
01/30/2025 Details and Download
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Part Status:
Active
Active
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Vishay SUP70030E-GE3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 3.18mΩ |
| Rated Power Dissipation: | 375W |
| Qg Gate Charge: | 142.4nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 150A |
| Turn-on Delay Time: | 30ns |
| Turn-off Delay Time: | 50ns |
| Rise Time: | 13ns |
| Fall Time: | 15ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 10870pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
31 Weeks
Quantity
Unit Price
50
$1.82
200
$1.79
750
$1.77
1,250
$1.76
2,500+
$1.73
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole