text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMBG65R048M1HXTMA1

Infineon Technologies | IMBG65R048M1HXTMA1

Manufacturer Part #

IMBG65R048M1HXTMA1

650 V 45A 183W N-Channel SMT CoolSiCTM M1 SiC Trench Power MOSFET-PG-TO263-7-12

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2516
Product Specification Section
Infineon Technologies IMBG65R048M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 45A
Input Capacitance: 1118pF
Power Dissipation: 183W
Operating Temp Range: -55°C to +175°C
Package Style:  PG-TO-263-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
1000
Total
$9,110.00
USD
Quantity
Unit Price
1,000+
$9.11
Product Variant Information section