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Manufacturer Part #

IMZC120R022M2HXKSA1

CoolSiC Series 1200 V 80 A 22 mOhm Single N-Channel SiC MOSFET - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2419
Product Specification Section
Infineon IMZC120R022M2HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 80A
Input Capacitance: 2330pF
Power Dissipation: 329W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
5
USA:
5
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$9.28
USD
Quantity
Unit Price
1
$9.28
5
$9.17
25
$9.07
100
$8.97
250+
$8.84
Product Variant Information section