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STMicroelectronics | SCT025W120G3-4

Manufacturer Part #

SCT025W120G3-4

Silicon carbide Power MOSFET 1200 V, 27 m typ., 56 A in an HiP247-4 package

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCT025W120G3-4 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 56A
Input Capacitance: 1990pF
Power Dissipation: 388W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
36 Weeks
Minimum Order:
600
Multiple Of:
30
Total
$5,520.00
USD
Quantity
Unit Price
3
$9.59
15
$9.47
40
$9.41
100
$9.34
250+
$9.20
Product Variant Information section