text.skipToContent text.skipToNavigation

Manufacturer Part #

SCT1000N170

N-Channel 1700 V 1.4 Ohm Flange Mount Silicon Carbide Power Mosfet - HIP247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCT1000N170 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 7A
Input Capacitance: 133pF
Power Dissipation: 96W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$4.56
USD
Quantity
Unit Price
1
$4.56
20
$4.46
75
$4.39
200
$4.34
750+
$4.20
Product Variant Information section