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Infineon Technologies | FF4MR12W2M1HB11BPSA1

Manufacturer Part #

FF4MR12W2M1HB11BPSA1

1200 V 170 A Dual N-Channel Chassis Mount CoolSiC Trench MOSFET Module

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code: 2332
Product Specification Section
Infineon Technologies FF4MR12W2M1HB11BPSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 23V
Isolation Voltage-RMS: 3000V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 170A
Configuration: Half Bridge
Operating Temp Range: -40°C to +175°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
2
USA:
2
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$371.35
USD
Quantity
Unit Price
1
$371.35
3
$365.54
5
$362.87
10
$359.28
20+
$353.67
Product Variant Information section