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Manufacturer Part #
FF4MR12W2M1HB70BPSA1
1200 V 200 A Dual N-Channel Chassis Mount CoolSiC Trench MOSFET Module
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1 per Bulk Package Style:Module Mounting Method:Chassis Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon FF4MR12W2M1HB70BPSA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Wafer Size Change
04/02/2025 Details and Download
Location Change
01/29/2025 Details and Download
Description:Introduction of an additional wafer production location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for products with CoolSiC™ MOSFET 1200V Gen. 1.Reason for change:Introduction of an additional wafer production location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for products with CoolSiC™ MOSFET 1200V Gen. 1.
Part Status:
Active
Active
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- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FF4MR12W2M1HB70BPSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--silicon-carbide-power-modules-sic-power-modules/ff4mr12w2m1hb70bpsa1-infineon-1204853
Infineon FF4MR12W2M1HB70BPSA1 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Gate-Source Voltage-Max [Vgss]: | 23V |
| Isolation Voltage-RMS: | 3000V |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 200A |
| Configuration: | Half Bridge |
| Operating Temp Range: | -40°C to +150°C |
| Package Style: | Module |
| Mounting Method: | Chassis Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
10 Weeks
Quantity
Unit Price
1
$221.01
3
$218.01
5
$216.62
20
$212.91
30+
$210.49
Product Variant Information section
Available Packaging
Package Qty:
1 per Bulk
Package Style:
Module
Mounting Method:
Chassis Mount