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Infineon Technologies | FF6MR12W2M1HB11BPSA1

Manufacturer Part #

FF6MR12W2M1HB11BPSA1

1200 V 145 A Dual N-Channel Chassis Mount CoolSiC Trench MOSFET Module

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies FF6MR12W2M1HB11BPSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 23V
Isolation Voltage-RMS: 3000V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 145A
Configuration: Half Bridge
Operating Temp Range: -40°C to +175°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
15
Multiple Of:
15
Total
$4,171.05
USD
Quantity
Unit Price
1
$288.21
3
$284.06
5
$282.14
15
$278.07
25+
$274.49
Product Variant Information section