Everspin Technologies | MR2A08AMA35

The MR2A08AMA35 is a magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits. It is available in 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. and is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Features:

• Fast 35ns Read/Write Cycle
• SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
• Unlimited Read & Write Endurance
• Data Always Non-volatile for >20 years at Temperature
• One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
• Replace battery-backed SRAM solutions with MRAM to eliminate battery assembly, improving reliability
• 3.3 Volt Power Supply
• Automatic Data Protection on Power Loss
• Commercial, Industrial, Automotive Temperatures
• RoHS-Compliant SRAM TSOP2 Package
• RoHS-Compliant SRAM BGA Package
• AEC-Q100 Grade 1 Qualified

View the available MR2A08A series of MRAMs