Everspin Technologies | MR4A16BMA35

The MR4A16BMA35 is a magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. It is available in a small footprint 48-pin ball grid array (BGA) package.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent  writes with voltage out of specification.

Features:

• +3.3 Volt power supply
• Fast 35 ns read/write cycle
• SRAM compatible timing
• Unlimited read & write endurance
• Data always non-volatile for >20 years at temperature
• RoHS-compliant small footprint BGA and TSOP2 package
• AEC-Q100 Grade 1 option in TSOP2 package.

Benefits:

• One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
• Improves reliability by replacing battery-backed SRAM

View the available MR4A16B series of MRAMs