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Manufacturer Part #

QSB363ZR

QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code: 2419
Product Specification Section
onsemi QSB363ZR - Technical Attributes
Attributes Table
Wavelength: 940nm
Angle of Half Sensitivity: ±12°
Power Dissipation: 75mW
CE Voltage-Max: 30V
Package Style:  T-3/4
Mounting Method: Surface Mount
Features & Applications

The QSB363ZR is a Subminiature plastic silicon infrared phototransistor encapsulated in a black infrared transparent. Available in T-3/4 package.

Features:

  • NPN silicon phototransistor
  • T-3/4 (2 mm) surface mount package
  • Medium wide beam angle 24°
  • Black plastic package
  • Matched emitters: QEB363 or QEB373
  • Daylight filter
  • Tape & Reel option (See tape & Reel specifications)
  • Lead form options: Gullwing, Yoke, Z-Bend

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Consumer Appliances

View the Available QSB Series of Photodetectors

Pricing Section
Global Stock:
8,000
Germany (Online Only):
8,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$78.60
USD
Quantity
Unit Price
1,000
$0.0786
3,000
$0.0786
5,000
$0.0786
15,000
$0.0786
25,000+
$0.0786