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STMicroelectronics | SCT025W120G3-4

Manufacturer Part #

SCT025W120G3-4

Silicon carbide Power MOSFET 1200 V, 27 m typ., 56 A in an HiP247-4 package

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCT025W120G3-4 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 56A
Input Capacitance: 1990pF
Power Dissipation: 388W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
36 Weeks
Minimum Order:
600
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$5,808.00
USD
Quantity
Unit Price
3
$10.09
15
$9.98
40
$9.92
150
$9.83
400+
$9.68
Product Variant Information section