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Manufacturer Part #

BFU590GX

BFU590G Series 12 V 200 mA 2 W NPN Wideband Silicon RF Transistor - SOT-223

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP BFU590GX - Technical Attributes
Attributes Table
Polarity: NPN
Type: RF
CE Voltage-Max: 12V
Collector Current Max: 200mA
Power Dissipation-Tot: 2000mW
Collector - Base Voltage: 24V
Emitter - Base Voltage: 2V
DC Current Gain-Min: 60
Collector - Current Cutoff: 1nA
Configuration: Dual
Frequency - Transition: 8.5GHz
Operating Temp Range: -65°C to +150°C
Moisture Sensitivity Level: 1
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
N/A
Minimum Order:
2000
Multiple Of:
1000
Total
$940.00
USD
Quantity
Unit Price
1,000
$0.475
2,000
$0.47
3,000
$0.465
4,000
$0.46
5,000+
$0.455
Product Variant Information section