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Manufacturer Part #

BFU590GX

BFU590G Series 12 V 200 mA 2 W NPN Wideband Silicon RF Transistor - SOT-223

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code: 2203
Product Specification Section
NXP BFU590GX - Technical Attributes
Attributes Table
Polarity: NPN
Type: RF
CE Voltage-Max: 12V
Collector Current Max: 200mA
Power Dissipation-Tot: 2000mW
Collector - Base Voltage: 24V
Emitter - Base Voltage: 2V
DC Current Gain-Min: 60
Collector - Current Cutoff: 1nA
Configuration: Dual
Frequency - Transition: 0.0000085MHz
Operating Temp Range: -65°C to +150°C
Moisture Sensitivity Level: 1
Mounting Method: Surface Mount
Pricing Section
Global Stock:
8,000
Germany (Online Only):
8,000
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$660.00
USD
Quantity
Web Price
1,000
$0.66
3,000
$0.64
5,000
$0.63
10,000
$0.62
20,000+
$0.60
Product Variant Information section