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Infineon | BSC070N10NS5ATMA1

Manufacturer Part #

BSC070N10NS5ATMA1

BSC070xx Series 100 V 80 A 41 nC SMT OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2312
Product Specification Section
Infineon BSC070N10NS5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 7mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 14A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 24ns
Rise Time: 5ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 2100pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
15,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,400.00
USD
Quantity
Unit Price
5,000
$0.48
10,000
$0.475
15,000+
$0.47
Product Variant Information section