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Manufacturer Part #

BSZ180P03NS3EGATMA1

Single P-Channel 30 V 39.6 A 40 W SMT OptiMOS Power Transistor - PG-TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2327
Product Specification Section
Infineon BSZ180P03NS3EGATMA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 40W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 39.6A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 30ns
Rise Time: 16.5ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -1.9V
Technology: OptiMOS
Height - Max: 1.1mm
Length: 3.4mm
Input Capacitance: 1480pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,000.00
USD
Quantity
Unit Price
5,000
$0.20
10,000
$0.199
15,000
$0.198
20,000
$0.197
25,000+
$0.194