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Diodes Incorporated | DMN2600UFB-7

Manufacturer Part #

DMN2600UFB-7

Single N-Channel 25 V 600 mOhm 0.85 nC 0.54 W Silicon SMT Mosfet - UFDFN-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2416
Product Specification Section
Diodes Incorporated DMN2600UFB-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 600mΩ
Rated Power Dissipation: 0.54W
Qg Gate Charge: 0.85nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 1.3A
Turn-on Delay Time: 4.1ns
Turn-off Delay Time: 34.8ns
Rise Time: 11.5ns
Fall Time: 20.9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Si
Height - Max: 0.53mm
Length: 1.075mm
Input Capacitance: 70.13pF
Package Style:  UFDFN-3
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
81,000
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$127.20
USD
Quantity
Unit Price
3,000
$0.0424
12,000
$0.0412
30,000
$0.0404
75,000
$0.0397
120,000+
$0.0385
Product Variant Information section