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Diodes Incorporated | DMN3200U-7

Manufacturer Part #

DMN3200U-7

Single N-Channel 30 V 200 mOhm 650 mW Silicon Surface Mount Mosfet - SOT-23

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN3200U-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 200mΩ
Rated Power Dissipation: 650mW
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 2.2A
Turn-on Delay Time: 40.2ns
Turn-off Delay Time: 471ns
Rise Time: 43.1ns
Fall Time: 104ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Si
Height - Max: 1.1mm
Length: 3mm
Input Capacitance: 290pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Total
$324.00
USD
Quantity
Unit Price
3,000
$0.108
9,000
$0.106
30,000
$0.104
60,000+
$0.103
Product Variant Information section