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onsemi | FDS5672

Manufacturer Part #

FDS5672

N-Channel 60 V 10 mOhms PowerTrench Mosfet SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS5672 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 10mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 45nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS5672 is a 60 V 10 mΩ N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed

Features:

  • RDS(ON) = 10 mΩ @ VGS = 10 V, ID = 12 A
  • RDS(ON) = 14 mΩ @ VGS = 6 V, ID = 10 A
  • High performance trench technology for extremely low rDS(ON)
  • Low gate charge
  • High power and current handling capability

Applications:

  • DC-DC Converters
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,025.00
USD
Quantity
Unit Price
2,500
$0.81
5,000
$0.80
7,500
$0.795
10,000+
$0.785
Product Variant Information section