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  6. IMBF170R1K0M1XTMA1

Infineon | IMBF170R1K0M1XTMA1

Manufacturer Part #

IMBF170R1K0M1XTMA1

Single N-Channel 1700 V 5.2 A 68 W CoolSiC™ Surface Mount Mosfet - TO-263-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2526
Product Specification Section
Infineon IMBF170R1K0M1XTMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain-Source On Resistance-Max: 880mΩ
Rated Power Dissipation: 68W
Qg Gate Charge: 5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.2A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 20ns
Rise Time: 14ns
Fall Time: 22ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 275pF
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:Order inventroy details
2,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,840.00
USD
Quantity
Unit Price
1,000
$1.84
2,000+
$1.81
Product Variant Information section