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Infineon | IPB039N10N3GATMA1

Manufacturer Part #

IPB039N10N3GATMA1

Single N-Channel 100 V 3.9 mOhm 88 nC OptiMOS™ Power Mosfet - D2PAK-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2241
Product Specification Section
Infineon IPB039N10N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 3.9mΩ
Rated Power Dissipation: 214|W
Qg Gate Charge: 88nC
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,130.00
USD
Quantity
Unit Price
1,000
$1.13
2,000
$1.12
3,000
$1.11
5,000+
$1.10
Product Variant Information section