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Manufacturer Part #

IPD530N15N3GATMA1

N-Channel 150 V 53 mOhm 12 nC OptiMOS™3 Power-Transistor - PG-TO252-3-11

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2435
Product Specification Section
Infineon IPD530N15N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 53mΩ
Rated Power Dissipation: 68W
Qg Gate Charge: 8.7nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 13ns
Rise Time: 9ns
Fall Time: 3ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 667pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
12,500
USA:
12,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,087.50
USD
Quantity
Unit Price
2,500
$0.435
5,000
$0.43
10,000
$0.425
12,500+
$0.42
Product Variant Information section